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NP80N06DLD - N-CHANNEL POWER MOS FET

Download the NP80N06DLD datasheet PDF. This datasheet also covers the NP80N06CLD variant, as both devices belong to the same n-channel power mos fet family and are provided as variant models within a single manufacturer datasheet.

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Channel Temperature 175 degree rated.
  • Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX. ) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX. ) (VGS = 5 V, ID = 40 A).
  • Low Ciss : Ciss = 2360 pF (TYP. ).
  • Built-in Gate protection diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP80N06CLD-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Renesas

Part Number Description
NP80N06CLD N-CHANNEL POWER MOS FET
NP80N06ELD N-CHANNEL POWER MOS FET
NP80N04MDG N-CHANNEL POWER MOS FET
NP80N04MLG N-CHANNEL POWER MOS FET
NP80N04NDG N-CHANNEL POWER MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N06CLD,NP80N06DLD,NP80N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2360 pF (TYP.