NP80N06DLD
Description
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Channel Temperature 175 degree rated
- Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A)
- Low Ciss : Ciss = 2360 pF (TYP.)
- Built-in Gate protection diode
