PS2561L1-1 phototransistor equivalent, gaas light emitting diode and an npn silicon phototransistor.
* High isolation voltage (BV = 5 000 Vr.m.s.)
* High collector to emitter voltage (VCEO = 80 V)
* High current transfer ratio (CTR = 200% TYP.)
* High-spe.
* Power supply
* Telephone/FAX.
* FA/OA equipment
* Programmable logic controllers
R08DS0207EJ0100 Rev..
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