R1Q6A7236ABG - 72-Mbit DDRII SRAM Separate I/O 2-word Burst RAM

The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

It integrates unique synchronous peripheral circuitry and a burst counter.

• ႑ Power Supply.
• 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) ႑ Clock.
• Fast clock cycle time for high bandwidth.
• Two input clocks (K and /K) for precise DDR timing at clock rising edges only.
• Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches.
• Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems.
• Clock-stop capability with μs restart ႑ I/O.
• Separate independent.