TP65H050G4BS Datasheet, FET, Renesas

Download (Size : 1.19MB)

TP65H050G4BS Features and benefits

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by — Wide gate safety margin — Transient over-voltage capabil.

TP65H050G4BS Application

▪ Datacom ▪ Broad industrial ▪ PV inverter ▪ Servo motor Cascode Schematic Symbol Cascode Device Structure Key Specifi.

TP65H050G4BS Description

The TP65H050G4BS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. Th.

Image gallery