TP65H050G4QS fet equivalent, 650v fet.
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
— Wide gate safety margin — Transient over-voltage capabil.
* Datacom
* Broad industrial
* PV inverter
* Servo motor
Pin 8
D
Pin 12 Pin 1
G
KS S
Cascode Schemati.
The TP65H050G4QS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
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