TP65H035G4WS Datasheet - Renesas

650V FET

TP65H035G4WS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Enhanced inrush current capability

* Very low QRR

* Reduced crossover loss Benefits

* Enable

TP65H035G4WS General Description

The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and p.

TP65H035G4WS Datasheet (1.21 MB)