TP65H035G4YS Datasheet, FET, Renesas

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TP65H035G4YS Features and benefits

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by — Wide gate safety margin — Transient over-voltage capabil.

TP65H035G4YS Application

* Datacom
* Broad industrial
* PV inverter
* Servo motor D G KS S Cascode Schematic Symbol Cascode De.

TP65H035G4YS Description

The TP65H035G4YS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The.

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