TP65H035G4QS Datasheet, FET, Renesas

Download (Size : 1.03MB)

TP65H035G4QS Features and benefits

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by — Wide gate safety margin — Transient over-voltage capabil.

TP65H035G4QS Application

* Datacom
* Broad industrial
* PV inverter
* Servo motor Pin 8 D Pin 12 Pin 1 G KS S Cascode Schemati.

TP65H035G4QS Description

The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. Th.

Image gallery