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UPA2762UGR Datasheet, Renesas

UPA2762UGR Datasheet, Renesas

UPA2762UGR

datasheet Download (Size : 222.60KB)

UPA2762UGR Datasheet

UPA2762UGR transistor

mos field effect transistor.

UPA2762UGR

datasheet Download (Size : 222.60KB)

UPA2762UGR Datasheet

UPA2762UGR Features and benefits


* Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10 A)
* Low Ciss: Ciss = 710 pF TYP. (VDS =.

UPA2762UGR Application

of a notebook computer. Features
* Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(.

UPA2762UGR Description

R07DS0011EJ0100 Rev.1.00 Jun 01, 2010 The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features
* Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12.

Image gallery

UPA2762UGR Page 1 UPA2762UGR Page 2 UPA2762UGR Page 3

TAGS

UPA2762UGR
MOS
FIELD
EFFECT
TRANSISTOR
Renesas

Manufacturer


Renesas (https://www.renesas.com/)

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