UPA2762UGR - MOS FIELD EFFECT TRANSISTOR

Renesas

UPA2762UGR Datasheet Preview — Preview of UPA2762UGR PDF

Datasheet Details

Part number	UPA2762UGR
Manufacturer	Renesas ↗
File Size	222.60 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	UPA2762UGR_Renesas.pdf

UPA2762UGR Product details

Description

R07DS0011EJ0100 Rev.1.00 Jun 01, 2010 The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer.

Features

Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10 A).
Low Ciss: Ciss = 710 pF TYP. (VDS = 15 V, VGS = 0 V).
Small and surface mount package (Power SOP8).
RoHS Compliant Ordering Information Part No. μ PA2762UGR-E1-AT ∗1 μ PA2762UGR-E2-AT ∗1 LEAD.

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Published: Sep 17, 2013 |