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uPD46185364B - 18M-BIT QDR II SRAM 4-WORD BURST OPERATION

This page provides the datasheet information for the uPD46185364B, a member of the uPD46185084B 18M-BIT QDR II SRAM 4-WORD BURST OPERATION family.

Description

R10DS0113EJ0200 Rev.2.00 Nov 09, 2012 The μPD46185084B is a 2,097,152-word by 8-bit, the μPD46185094B is a 2,097,152-word by 9-bit, the μPD46185184B is a 1,048,576-word by 18-bit and the μPD46185364B is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS te

Features

  • 1.8 ± 0.1 V power supply.
  • 165-pin.

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Datasheet preview – uPD46185364B

Datasheet Details

Part number uPD46185364B
Manufacturer Renesas
File Size 567.19 KB
Description 18M-BIT QDR II SRAM 4-WORD BURST OPERATION
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μPD46185084B μPD46185094B μPD46185184B μPD46185364B Datasheet 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Description R10DS0113EJ0200 Rev.2.00 Nov 09, 2012 The μPD46185084B is a 2,097,152-word by 8-bit, the μPD46185094B is a 2,097,152-word by 9-bit, the μPD46185184B is a 1,048,576-word by 18-bit and the μPD46185364B is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The μPD46185084B, μPD46185094B, μPD46185184B and μPD46185364B integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#.
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