HAF2012 switching equivalent, silicon n channel mos fet series power switching.
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* Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high juncti.
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