RJE0601JPE - Silicon P Channel MOS FET Series Power Switching

Product Overview

Renesas Technology

Part number	RJE0601JPE
Manufacturer	Renesas Technology
File Size	106.47 KB
Description	Silicon P Channel MOS FET Series Power Switching
Datasheet	RJE0601JPE Datasheet
Additional preview pages of the RJE0601JPE datasheet.

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

High endurance capability against to the short circuit. Built-in the over temperature shut-down circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS: 22 m Typ, 27 m Max (VGS =.
10 V) Outline.

Other Datasheets by Renesas Technology

Published: Nov 8, 2010 |