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RJE0601JPE Datasheet

Silicon P Channel MOS FET Series Power Switching

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RJE0601JPE
Silicon P Channel MOS FET Series
Power Switching
Preliminary Datasheet
REJ03G1906-0200
Rev.2.00
Jun 29, 2010
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
High endurance capability against to the short circuit.
Built-in the over temperature shut-down circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Low on-resistance RDS: 22 mTyp, 27 mMax (VGS = –10 V)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
D
123
Current
G
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Symbol
VDSS
VGSS
VGSS
ID
IDR
IAP Note 1
EAR Note 2
Pch Note 1
Channel temperature
Storage temperature
Tch
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg 50
3. It provides by the current limitation lower bound value.
Ratings
–60
–16
2.5
–40 Note 3
–40
–15
964
50
150
–55 to +150
1. Gate
2. Drain
(Flange)
3. Source
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
www.DataSheet.in
Page 1 of 6


Renesas Electronics Components Datasheet

RJE0601JPE Datasheet

Silicon P Channel MOS FET Series Power Switching

No Preview Available !

RJE0601JPE
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 4. Pulse test
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Min
–3.5
Vop
ID limt
–3.5
–40
Typ
–0.8
–0.35
175
Max
–1.2
–100
–50
–1
— –12
–60 —
Unit
V
V
A
A
A
mA
mA
C
V
A
(Ta = 25°C)
Test Conditions
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Vi = –1.2 V, VDS = 0
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Channel temperature
(dv/dt VGS 500 V/ms)
VGS = –12 V, VDS = –10 V Note 4
Electrical Characteristics
Item
Symbol Min Typ Max Unit
Drain current
Drain to source breakdown
voltage
ID1 — — –40 A
ID2 — — –10 mA
ID3
–40 –60
A
V(BR)DSS
–60
V
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
V(BR)GSS
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
VGS(off)
|yfs|
RDS(on)
RDS(on)
Coss
–16
2.5
–2.2
8.4
–0.8
–0.35
27
26
22
860
–100
–50
–1
100
–10
–3.4
45
27
V
V
A
A
A
A
mA
mA
A
V
S
m
m
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse
recovery time
td(on)
tr
td(off)
tf
VDF
trr
— 12.6 —
— 12.5 —
— 3.7 —
— 2.2 —
— –0.95 —
— 100 —
s
s
s
s
V
ns
Over load shut down
operation time Note 6
tos1 — 2.3 — ms
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
VGS = –3.5 V, VDS = –10 V
VGS = –1.2 V, VDS = –10 V
VGS = –12 V, VDS = –10 V Note 5
ID = –10 mA, VGS = 0
IG = –800 A, VDS = 0
IG = 100 A, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VGS = –1.2 V, VDS = 0
VGS = 2.4 V, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VDS = –60 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –20 A, VDS = –10 V Note 5
ID = –20 A, VGS = –6 V Note 5
ID = –20 A, VGS = –10 V Note 5
VDS = –10 V, VGS = 0, f = 1MHz
VGS = –10 V, ID= –20 A,
RL = 1.5
IF = –40 A, VGS = 0
IF = –40 A, VGS = 0
diF/dt = 50 A/s
VGS = –5 V, VDD = –16 V
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
www.DataSheet.in
Page 2 of 6


Part Number RJE0601JPE
Description Silicon P Channel MOS FET Series Power Switching
Maker Renesas Technology
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