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RJK0384DPA Datasheet Silicon N Channel Power MOS FET Power Switching

Manufacturer: Renesas

Overview: www.DataSheet4U.com RJK0384DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1724-0101 Preliminary Rev.1.

Key Features

  • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline WPAK 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 1 G1 8 G2 9 S2 S2 S2 6 7 5 4 3 2 1 MOS1 MOS2 + SBD Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VD.