RJK0384DPA
Features
- -
- -
- Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free
Outline
WPAK
2 3 4 D1 D1 D1 9 S1/D2
5 6 7 8
1 G1
8 G2
S2 S2 S2 6 7 5
4 3 2 1
MOS1
MOS2 + SBD
Absolute Maximum Ratings
(Ta = 25°C)
Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Pch Note3 Tch Tstg
Note 2
MOS1 30 ±20 15 60 15 11 12.1 10 150
- 55 to +150
MOS2 30 ±20 42 168 42 18 32.4 25 150
- 55 to +150
Unit V V A A A A m J W °C °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc=25°C
REJ03G1724-0101 Rev.1.01 Jul 10, 2008 Page 1 of 4
Electrical Characteristics
..
- MOS1
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage...
