STP2327 Description
STP2327 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are...
STP2327 Key Features
- 100V/-1.5.0A, RDS(ON) = 520m-ohm (Typ.) @VGS = -10V
- 100V/-0.5.0A, RDS(ON) = 600m-ohm @VGS = -4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-23-6L package design PART MARKING Y: Year Code A: date Code STANSON TECHNOLOGY 120 Bentley Square, Moun