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11N4LLF5 Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. PowerFLAT™ 3.3x3.3 Figure.

11N4LLF5 Key Features

  • Low gate charge
  • Very low on-resistance
  • High avalance ruggedeness