2STA1694 transistor equivalent, high power pnp epitaxial planar bipolar transistor.
*
*
*
*
*
High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC
3 2 1.
*
Audio power amplifier
TO-3P
Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar t.
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2S.
Image gallery
TAGS
Download