SCTWA40N12G24AG Datasheet PDF - STMicroelectronics Automotive-grade silicon carbide Power MOSFET Specs

SCTWA40N12G24AG - Automotive-grade silicon carbide Power MOSFET

Datasheet Summary

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code SCTWA40N12G24AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247-4 2 34 1 Drain(1, TAB).
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4.

Datasheet Details

Part number	SCTWA40N12G24AG
Manufacturer	STMicroelectronics
File Size	219.90 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTWA40N12G24AG Datasheet
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Full PDF Text Transcription

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SCTWA40N12G24AG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247‑4 package Features Order code SCTWA40N12G24AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247-4 2 34 1 Drain(1, TAB) • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4 Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Published: Feb 18, 2023 |