STB10LN80K5 mosfet equivalent, n-channel power mosfet.
Order code STB10LN80K5
VDS 800 V
RDS(on) max. 0.63 Ω
ID 8A
* Industry’s lowest RDS(on) x area
* Industry’s best figure of merit (FoM)
* Ultra-low gate cha.
* Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tech.
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.
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