STB13005-1 transistors equivalent, high voltage fast-switching npn power transistors.
* Low spread of dynamic parameters
* Minimum lot-to-lot spread for reliable operation
* Very high switching speed
* Through hole TO-262 (I2PAK) power pack.
* Electronic ballast for fluorescent lighting
* Switch mode power supplies
Description
The device is manufacture.
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining t.
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