STB13007DT4 Datasheet (ST Microelectronics) - High voltage fast-switching NPN power transistor

STB13007DT4, High voltage fast-switching NPN power transistor

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure to enhance switching speeds.

Applications * * Electronic transformers for halogen lamps Switch mode power supplies

STB13007DT4 Features

* Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully