STB130N6F7 - N-channel Power MOSFET

STMicroelectronics

STB130N6F7 Datasheet Preview — Preview of STB130N6F7 PDF

Datasheet Details

Part number	STB130N6F7
Manufacturer	STMicroelectronics ↗
File Size	705.80 KB
Description	N-channel Power MOSFET
Datasheet	STB130N6F7-STMicroelectronics.pdf

STB130N6F7 Product details

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code STB130N6F7 VDS 60 V RDS(on) max. 5.0 mΩ ID 80 A PTOT 160 W.
Among the lowest RDS(on) on the market.
Excellent figure of merit (FoM).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.

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Published: Mar 22, 2016 |