STB13005 Datasheet - ST Microelectronics

STB13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. 123 I2PAK Figure 1. Internal schem.

STB13005 Features

* Low spread of dynamic parameters

* Minimum lot-to-lot spread for reliable operation

* Very high switching speed

* Through hole TO-262 (I2PAK) power package in tube (suffix “-1”) Applications

* Electronic ballast for fluorescent lighting

* Switch mode power supplies Descript

STB13005_STMicroelectronics.pdf