STB13005-1 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
123 I2PAK Figure 1.
Internal schem
STB13005-1 Features
* Low spread of dynamic parameters
* Minimum lot-to-lot spread for reliable operation
* Very high switching speed
* Through hole TO-262 (I2PAK) power package in tube (suffix “-1”) Applications
* Electronic ballast for fluorescent lighting
* Switch mode power supplies Descript
