STB13NM60N Datasheet (STMicroelectronics)

STB13NM60N, N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most

STB13NM60N Features

* TAB 3 1 D²PAK TAB 3 1 DPAK Order code VDS (@Tjmax) RDS(on) max STB13NM60N STD13NM60N 650 V 0.36 Ω ID 11 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Figure 1. Internal schematic diagram 'RU7$%

* 6 Appli