STB13NM60N Datasheet - STMicroelectronics

STB13NM60N N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most.

STB13NM60N Features

* TAB 3 1 D²PAK TAB 3 1 DPAK Order code VDS (@Tjmax) RDS(on) max STB13NM60N STD13NM60N 650 V 0.36 Ω ID 11 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Figure 1. Internal schematic diagram 'RU7$%

* 6 Appli

STB13NM60N Datasheet (648.70 KB)