STH290N4F6-2AG mosfet equivalent, n-channel power mosfet.
Order code
VDS
STH290N4F6-2AG 40 V
STH290N4F6-6AG
RDS(on) max.
1.7 mΩ
ID 180 A
PTOT 300 W
* Designed for automotive applications and AEC-Q101 qualified
* V.
and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low.
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STH290N4F6-2AG STH290N4F6-6AG
Table 1: Device su.
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