STH6N95K5-2
Features
Order code
VDS RDS(on) max. ID
PTOT
STH6N95K5-2 950 V
1.25 Ω
6 A 110 W
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (Fo M)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
S(2, 3)
Order code STH6N95K5-2
AM15557a.v3
Table 1: Device summary
Marking
Package
6N95K5
H²PAK-2
Packaging Tape and reel
March 2015
Doc ID027383 Rev 3
This is information on a product in full production.
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Contents
Contents
1 Electrical ratings 3
2 Electrical characteristics...
