STH6N95K5-2 mosfet equivalent, n-channel power mosfet.
Order code
VDS RDS(on) max. ID
PTOT
STH6N95K5-2 950 V
1.25 Ω
6 A 110 W
* Industry’s lowest RDS(on) x area
* Industry’s best figure of merit (FoM)
* Ult.
* Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tech.
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.
Image gallery
Download