Datasheet Summary
N-channel 950 V, 1 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a H²PAK-2 package
- production data
Figure 1: Internal schematic diagram D(TAB)
G(1)
Features
Order code
VDS RDS(on) max. ID
PTOT
STH6N95K5-2 950 V
1.25 Ω
6 A 110 W
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring...