STH60N10 Datasheet (ST Microelectronics) - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STH60N10, N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 s s s s s s s s V DSS 100 V 100 V 100 V R DS( on) < 0.025 Ω < 0.025 Ω < 0.025 Ω ID 60 A 36 A 60 A TO-247 TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 2 1 3 2 3 2 TO-218 1 ISOWATT218 1 APPLICATIONS HIGH CU