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STH6N95K5-2 N-channel Power MOSFET

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Description

STH6N95K5-2 N-channel 950 V, 1 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a H²PAK-2 package Datasheet - production data Figure 1: Internal schematic dia.
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

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Features

* Order code VDS RDS(on) max. ID PTOT STH6N95K5-2 950 V 1.25 Ω 6 A 110 W
* Industry’s lowest RDS(on) x area
* Industry’s best figure of merit (FoM)
* Ultra low gate charge
* 100% avalanche tested

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