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STL120N10F8 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.

It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.

Key Features

  • Order code STL120N10F8 VDS 100 V.
  • MSL1 grade.
  • 175 °C operating temperature.
  • 100% avalanche tested RDS(on) max. 4.6 mΩ ID 125 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL120N10F8 Datasheet N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package PowerFLAT 5x6 D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View GADG09062022 Features Order code STL120N10F8 VDS 100 V • MSL1 grade • 175 °C operating temperature • 100% avalanche tested RDS(on) max. 4.6 mΩ ID 125 A Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.