STL120N10F8 Datasheet | STMicroelectronics

N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STrip FET F8 Power MOSFET in a Power FLAT 5x6 package Power FLAT 5x6 D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View GADG09062022 Features Order code STL120N10F8 VDS 100 V - MSL1 grade - 175 °C operating temperature - 100% avalanche tested RDS(on) max. 4.6 mΩ ID 125 A Applications - Switching applications Description This N-channel Power MOSFET utilizes STrip FET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. Product status link STL120N10F8 Product summary Order code Marking(1) 120N10F8 Package Power FLAT 5x6 Packing Tape and...