STL120N4LF6AG - N-channel Power MOSFET
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STL120N4LF6AG Table 1: Device summary Marking Package 120N4LF6 PowerFLAT™ 5x6 Packing Tape an
STL120N4LF6AG Features
* Order code VDS STL120N4LF6AG 40 V RDS(on) max. 3.6 mΩ ID PTOT 120 A 96 W
* Designed for automotive applications and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss
* Wettable flanks package Appli
