STL120N4LF6AG Datasheet - STMicroelectronics

STL120N4LF6AG N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STL120N4LF6AG Table 1: Device summary Marking Package 120N4LF6 PowerFLAT™ 5x6 Packing Tape an.

STL120N4LF6AG Features

* Order code VDS STL120N4LF6AG 40 V RDS(on) max. 3.6 mΩ ID PTOT 120 A 96 W

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss

* Wettable flanks package Appli

STL120N4LF6AG-STMicroelectronics.pdf