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STL120N4F6AG - N-channel Power MOSFET

Datasheet Summary

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code STL120N4F6AG VDS 40 V RDS(on) max. 3.6 mΩ ID 55 A.
  • AEC-Q101 qualified.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.
  • Wettable flank package.

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Datasheet preview – STL120N4F6AG

Datasheet Details

Part number STL120N4F6AG
Manufacturer STMicroelectronics
File Size 824.84 KB
Description N-channel Power MOSFET
Datasheet download datasheet STL120N4F6AG Datasheet
Additional preview pages of the STL120N4F6AG datasheet.

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Full PDF Text Transcription

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STL120N4F6AG Automotive-grade N-channel 40 V, 2.9 mΩ typ., 55 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL120N4F6AG VDS 40 V RDS(on) max. 3.6 mΩ ID 55 A  AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss  Wettable flank package Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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