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STL128DN - High voltage fast-switching NPN power transistor

Datasheet Summary

Description

Figure 1.

The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Features

  • TAB High voltage capability Low spread of dynamic parameters Very high switching speed Large RBSOA Integrated antiparallel collector-emitter diode 1 3 2 1 3 2 TO-220 TAB TO-220FP.

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Datasheet Details

Part number STL128DN
Manufacturer STMicroelectronics
File Size 446.40 KB
Description High voltage fast-switching NPN power transistor
Datasheet download datasheet STL128DN Datasheet
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STL128DN High voltage fast-switching NPN power transistor Features ■ ■ ■ ■ ■ TAB High voltage capability Low spread of dynamic parameters Very high switching speed Large RBSOA Integrated antiparallel collector-emitter diode 1 3 2 1 3 2 TO-220 TAB TO-220FP Applications ■ ■ Electronic ballast for fluorescent lighting Flyback and forward single transistor low power converters 1 3 TO-252 (DPAK) Description Figure 1. The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
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