STL8N10F7 - N-CHANNEL POWER MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STL8N10F7
Manufacturer	STMicroelectronics
File Size	518.25 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STL8N10F7 Datasheet
Additional preview pages of the STL8N10F7 datasheet.

Product details

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code VDS RDS(on) max. ID PTOT STL8N10F7 100 V 20 mΩ 8 A 2.9 W.
Among the lowest RDS(on) on the market.
Excellent FoM (figure of merit).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.

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Published: Jan 22, 2019 |