STL8N10F7 Datasheet | STMicroelectronics

Features Order code VDS RDS(on) max. ID PTOT STL8N10F7 100 V 20 mΩ 8 A 2.9 W - Among the lowest RDS(on) on the market - Excellent Fo M (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL8N10F7 Marking 8N10F Table 1: Device summary Package Power FLAT™ 3.3x3.3 Packing Tape and reel November 2017 Doc ID025076 Rev 3 This is information on a product in full production. 1/14 .st. Contents Contents 1 Electrical ratings...