Order codes VDS STB12NM50T4 STP12NM50 500 V STP12NM50FP
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance RD.

* Switching applications ID 12 A G(1) S(3) NG1D2TS3 Description These N-channel Power MOSFETs are developed usin.

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv.

STP12NM50FP

STP12NM50N

STP12NM60N

STP12N120K5

STP12N50M2

STP12N60M2

STP12N65M2

STP12N65M5

STP12NB30

STP12NK30Z

STP12NK60Z

STP12NK80Z

STP120N10F4