900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

STP3N100 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

No Preview Available !

STP3N100
STP3N100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP3N100
STP3N100FI
VDSS
1000 V
1000 V
R DS( on)
<5
<5
ID
3.5 A
2A
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INPUT CAPACITANCE
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
December 1996
Val ue
ST P 3N 10 0
ST P3 N100 F I
1000
1000
± 20
3.5 2
2 1.2
14 14
100 40
0.8 0.32
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
www.DataSheet.in


STMicroelectronics Electronic Components Datasheet

STP3N100 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

No Preview Available !

STP3N100/FI
THERMAL DATA
Rthj-case
Rthj- amb
Rt hc- sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1. 25
ISOWATT220
3. 12
6 2. 5
0. 5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current
(repetitive or not-repetitive, Tj = 25 oC)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current
(repetitive or not-repetitive, Tj = 100 oC)
Max Value
3.5
130
6
2
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 20 V
Min.
1000
Typ. Max.
25
250
± 100
Unit
V
µA
µA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1.5 A
R esist anc e
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2
3.5
Typ.
3
Max.
4
5
Unit
V
A
DYNAMIC
Symb ol
gfs
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 1. 5 A
Min.
1
Typ.
1.8
Max.
Unit
S
VDS = 25 V f = 1 MHz VG S = 0
750 950
80 110
25 40
pF
pF
pF
2/10
www.DataSheet.in


Part Number STP3N100
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Maker STMicroelectronics
Total Page 10 Pages
PDF Download

STP3N100 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 STP3N100 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
2 STP3N100FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy