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STMicroelectronics Electronic Components Datasheet

STP3NB100 Datasheet

N-CHANNEL PowerMESH MOSFET

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STP3NB100
STP3NB100FP
N-CHANNEL 1000V - 5.3- 3A TO-220/TO-220FP
PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
PRELIMINARY DATA
STP3NB100
1000 V
<6
3A
STP3NB100FP
1000 V
<6
3A
s TYPICAL RDS(on) = 5.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
3
2
1
3
2
1
)DESCRIPTION
t(sUsing the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
cvanced family of power MOSFETs with outstanding
uperformances. The new patent pending strip layout
rodcoupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
Pexceptional avalanche and dv/dt capabilities and
teunrivalled gate charge and switching characteris-
tics.
oleAPPLICATIONS
ss HIGH CURRENT, HIGH SPEED SWITCHING
bs SWITH MODE POWER SUPPLIES (SMPS)
Os DC-AC CONVERTERS FOR WELDING
-EQUIPMENT
t(s)ABSOLUTE MAXIMUM RATINGS
cSymbol
Parameter
roduVDS
PVDGR
teVGS
leID
soID
ObIDM (v)
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP3NB100 STP3NB100FP
1000
1000
±30
3 3 (*)
1.9 1.9 (*)
12 12
Unit
V
V
V
A
A
A
PTOT
Total Dissipation at TC = 25°C
100 35 W
Derating Factor
0.8
0.28
W/°C
dv/dt (1) Peak Diode Recovery voltage slope
4.5 4.5 V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tstg Storage Temperature
–65 to 150
°C
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD 3A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
150
(*)Limited only by maximum temperature allowed
°C
August 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/7


STMicroelectronics Electronic Components Datasheet

STP3NB100 Datasheet

N-CHANNEL PowerMESH MOSFET

No Preview Available !

STP3NB100/FP
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
1.25
TO-220FP
3.57
62.5
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
3
244
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS
t(s)IDSS
roducIGSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-body Leakage
Current (VDS = 0)
te PON (1)
leSymbol
oVGS(th)
ObsRDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID = 250 µA, VGS = 0
1000
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
VGS = ±30V
1
50
±100
V
µA
µA
nA
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10V, ID = 1.5 A
Min.
2
Typ.
3
5.3
Max.
4
6
Unit
V
t(s) -DYNAMIC
cSymbol
ugfs (1)
Parameter
Forward Transconductance
rodCiss
PCoss
ObsoleteCrss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 1.7 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
2.8
700
80
8
Max.
Unit
S
pF
pF
pF
2/7


Part Number STP3NB100
Description N-CHANNEL PowerMESH MOSFET
Maker STMicroelectronics
Total Page 7 Pages
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