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STP6NK90ZFP Datasheet

N-channel Power MOSFET

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STB6NK90ZT4, STP6NK90Z
STP6NK90ZFP, STW7NK90Z
Datasheet
N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH™ Power MOSFET
in D2PAK, TO-220, TO-220FP and TO-247 packages
TAB
3
1
D2PAK
TAB
TO-220 1 2 3
3
2
1
TO-220FP
TO-247
3
2
1
D(2, TAB)
G(1)
S(3)
AM01475V1
Product status
STB6NK90ZT4
STP6NK90Z
STP6NK90ZFP
STW7NK90Z
Features
Order codes
VDS
STB6NK90ZT4
STP6NK90Z
STP6NK90ZFP
900 V
STW7NK90Z
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Zener-protected
RDS(on)max.
ID
5.8 A
Applications
• Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
DS2985 - Rev 6 - April 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STP6NK90ZFP Datasheet

N-channel Power MOSFET

No Preview Available !

STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (2)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt (3) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C)
Tj Operating junction temperature range
Tstg Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 5.8 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS.
Value
D2PAK, TO-220, TO-247
900
± 30
5.8
3.65
23.2
140
4.5
TO-220FP
5.8 (1)
3.65 (1)
23.2
30
- 2500
-55 to 150
Unit
V
V
A
A
A
W
V/ns
V
°C
°C
Symbol
Rthj-case
Rthj-pcb
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Thermal resistance junction-ambient
Value
D2PAK TO-220 TO-220FP
0.89 4.2
60
62.5
TO-247
0.89
50
Unit
°C/W
°C/W
°C/W
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
5.8
300
Unit
A
mJ
DS2985 - Rev 6
page 2/26


Part Number STP6NK90ZFP
Description N-channel Power MOSFET
Maker STMicroelectronics
PDF Download

STP6NK90ZFP Datasheet PDF






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