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STP6NK90ZFP - N-channel Power MOSFET

Download the STP6NK90ZFP datasheet PDF. This datasheet also covers the STP6NK90Z variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • Type STP6NK90Z STP6NK90ZFP STB6NK90Z STW7NK90Z VDSS 900 V 900 V 900 V 900 V RDS(on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP6NK90Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by STMicroelectronics

Part Number Description
STP6N120K3 N-channel MOSFET
STP6N50 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP6N50FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP6N60M2 N-channel Power MOSFET
STP6N62K3 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP6NK90Z - STP6NK90ZFP STB6NK90Z - STW7NK90Z N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH™ Power MOSFET Features Type STP6NK90Z STP6NK90ZFP STB6NK90Z STW7NK90Z VDSS 900 V 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A 5.8 A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs.