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STMicroelectronics Electronic Components Datasheet

STS1HNC60 Datasheet

N-CHANNEL PowerMESH MOSFET

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STS1HNC60
N-CHANNEL 600V - 7- 0.4A SO-8
PowerMesh™II MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STS1HNC60
600 V
<8
0.36 A
s TYPICAL RDS(on) = 7
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™II
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE LOW POWER SUPPIES
(SMPS)
s CFL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
July 2001
Value
Unit
600 V
600 V
± 30 V
0.36 A
0.22 A
1.44 A
2.5 W
0.028
W/°C
3.5 V/ns
–65 to 150
°C
150 °C
(1)ISD 0.36 A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
1/6


STMicroelectronics Electronic Components Datasheet

STS1HNC60 Datasheet

N-CHANNEL PowerMESH MOSFET

No Preview Available !

STS1HNC60
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient Max
(Surface Mounted)
Maximum Lead Temperature For Soldering Purpose
35.7
60
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
0.4
100
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10V, ID = 0.3 A
Min.
2
Typ.
3
7
Max.
4
8
Unit
V
DYNAMIC
Symbol
gfs
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 0.3 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
1.25
160
26
3.8
Max.
Unit
S
pF
pF
pF
2/6


Part Number STS1HNC60
Description N-CHANNEL PowerMESH MOSFET
Maker ST Microelectronics
Total Page 6 Pages
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