SPN8848 mosfet equivalent, dual n-channel enhancement mode mosfet.
* 40V/10A, RDS(ON )= 8.5mΩ@VGS=10V
* 40V/8.0A, RDS(ON)=12mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistan.
such as notebook computer power management and other battery powered circuits where high-side switching, low in-line pow.
The SPN8848 is the Dual N-Channel Enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switc.
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