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Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP8610
Ver 1.1
PRODUCT SUMMARY
VDSS 20V
ID RDS(ON) (mΩ) Max
9.0 @ VGS=4.5V 9.5 @ VGS=4.0V 13A 10.0 @ VGS=3.7V 10.5 @ VGS=3.1V 11.0 @ VGS=2.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D1 D1 D2 D2
S mini 8
PIN 1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID Drain Current-Continuous c
IDM -Pulsed a c
TA=25°C TA=70°C
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit 20 ±10 13 10.
SP8610 Datasheet
