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SamHop Microelectronics

SP8610 Datasheet Preview

SP8610 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP8610
Ver 1.1
PRODUCT SUMMARY
VDSS
20V
ID RDS(ON) (mΩ) Max
9.0 @ VGS=4.5V
9.5 @ VGS=4.0V
13A 10.0 @ VGS=3.7V
10.5 @ VGS=3.1V
11.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D1 D1 D2 D2
S mini 8
PIN 1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous c
IDM -Pulsed a c
TA=25°C
TA=70°C
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
20
±10
13
10.4
58
1.32
0.84
-55 to 150
95
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jun,16,2016
www.samhop.com.tw




SamHop Microelectronics

SP8610 Datasheet Preview

SP8610 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SP8610
Ver 1.1
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=16V , VGS=0V
VGS= ±10V , VDS=0V
20 V
1 uA
±10 uA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=1mA
VGS=4.5V , ID=6.5A
VGS=4.0V , ID=6.5A
VGS=3.7V , ID=6.5A
VGS=3.1V , ID=6.5A
VGS=2.5V , ID=3.25A
VDS=5V , ID=6.5A
VDD=16V
ID=6.5A
VGS=4.5V
RGEN=6 ohm
VDS=16V,ID=13A,VGS=4.5V
VDS=16V,ID=13A,
VGS=4.5V
0.3 0.7 1.2
V
6.2 7.5 9.0 m ohm
6.4 7.7 9.5 m ohm
6.7 8.0 10.0 m ohm
7.0 8.5 10.5 m ohm
7.5 9.0 11.0 m ohm
34 S
274
1034
4988
2932
13
2.3
6.0
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=13A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz.
0.86 1.2
V
Jun,16,2016
2 www.samhop.com.tw


Part Number SP8610
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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