* Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=100°
STB28N15 Datasheet (152.13 KB)
STB28N15
SamHop Microelectronics
152.13 KB
N-channel enhancement mode field effect transistor.
STB28N15Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS .
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