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SamHop Microelectronics

STB520N Datasheet Preview

STB520N Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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STB520NGreen
Product
Sa mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
200V
22A
65 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-263 package.
D
GS
S TB S E R IE S
T O -263(DD-P AK )
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C
TC=70°C
200
±20
22
18.4
IDM -Pulsed a c
64
EAS Single Pulse Avalanche Energy d
110
TC=25°C
PD Maximum Power Dissipation
TC=70°C
75
52.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jul,07,2016
www.samhop.com.tw




SamHop Microelectronics

STB520N Datasheet Preview

STB520N Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STB520N
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VGS=0V , ID=250uA
VDS=160V , VGS=0V
VGS= ±20V , VDS=0V
200
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=11A
VDS=10V , ID=11A
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On DelayTime
tr Rise Time
tD(OFF)
Turn-Off DelayTime
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=100V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=100V,ID=11A,VGS=10V
VDS=100V,ID=11A,
VGS=10V
2.0
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage
VGS=0V,IS=6A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ Max Units
1
±100
V
uA
nA
2.5 4.0
V
52 65 m ohm
58 S
4750
245
183
pF
pF
pF
96 ns
92 ns
175 ns
38 ns
76 nC
8.2 nC
23 nC
0.74 1.3
V
Jul,07,2016
2 www.samhop.com.tw


Part Number STB520N
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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