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K3N4C1000D-DC Datasheet

Manufacturer: Samsung Electronics
K3N4C1000D-DC datasheet preview

Datasheet Details

Part number K3N4C1000D-DC
Datasheet K3N4C1000D-DC_SamsungElectronics.pdf
File Size 61.69 KB
Manufacturer Samsung Electronics
Description 8M-Bit CMOS Mask ROM
K3N4C1000D-DC page 2 K3N4C1000D-DC page 3

K3N4C1000D-DC Overview

The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level. (See mode selection table) This device operates with a 5V single power supply, and all inputs and outputs are TTL patible. Because of its asynchronous operation, it requires no...

K3N4C1000D-DC Key Features

  • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)
  • Fast access time : 100ns(Max.)
  • Supply voltage : single +5V
  • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)
  • Fully static operation
  • All inputs and outputs TTL patible
  • Three state outputs
  • Package -. K3N4C1000D-DC : 42-DIP-600 -. K3N4C1000D-GC : 44-SOP-600
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