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K3N4C1000D-DC Datasheet, Samsung Electronics

K3N4C1000D-DC Datasheet, Samsung Electronics

K3N4C1000D-DC

datasheet Download (Size : 61.69KB)

K3N4C1000D-DC Datasheet

K3N4C1000D-DC rom equivalent, 8m-bit cmos mask rom.

K3N4C1000D-DC

datasheet Download (Size : 61.69KB)

K3N4C1000D-DC Datasheet

Features and benefits


* Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)
* Fast access time : 100ns(Max.)
* Supply voltage : single +5V
* Current consum.

Description

The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level. (See mode sel.

Image gallery

K3N4C1000D-DC Page 1 K3N4C1000D-DC Page 2 K3N4C1000D-DC Page 3

TAGS

K3N4C1000D-DC
8M-Bit
CMOS
Mask
ROM
Samsung Electronics

Manufacturer


Samsung Electronics

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