K3N4C1000D-DC Datasheet 8M-Bit CMOS Mask ROM

Manufacturer: Samsung Electronics

K3N4C1000D-DC 8m-bit cmos mask rom by Samsung Electronics - Datasheet Preview

Datasheet Details

Part number	K3N4C1000D-DC
Manufacturer	Samsung Electronics
File Size	61.69 KB
Description	8M-Bit CMOS Mask ROM
Datasheet	K3N4C1000D-DC Datasheet

General Description

The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.

(See mode selection table) This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external clock assuring extremely easy operation.

Overview

K3N4C1000D-D(G)C 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM.

Key Features

Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode).
Fast access time : 100ns(Max. ).
Supply voltage : single +5V.
Current consumption Operating : 50mA(Max. ) Standby : 50µA(Max. ).
Fully static operation.
All inputs and outputs TTL compatible.
Three state outputs.
Package -. K3N4C1000D-DC : 42-DIP-600 -. K3N4C1000D-GC : 44-SOP-600 CMOS MASK ROM.

More Datasheets from Samsung Electronics

Part Number	Description
K3N4C1000D-GC	8M-Bit CMOS Mask ROM
K3N4C1000D-TC	8M-Bit CMOS Mask ROM
K3N4C1000D-TE	8M-Bit CMOS Mask ROM