K3N4C1000D-DC
Description
The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.
Key Features
- Fast access time : 100ns(Max.)
- Supply voltage : single +5V
- Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)
- Fully static operation
- Three state outputs
