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K3N4C1000D-DC - 8M-Bit CMOS Mask ROM

Datasheet Summary

Description

The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.

Features

  • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode).
  • Fast access time : 100ns(Max. ).
  • Supply voltage : single +5V.
  • Current consumption Operating : 50mA(Max. ) Standby : 50µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. K3N4C1000D-DC : 42-DIP-600 -. K3N4C1000D-GC : 44-SOP-600 CMOS MASK ROM.

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Datasheet Details

Part number K3N4C1000D-DC
Manufacturer Samsung Electronics
File Size 61.69 KB
Description 8M-Bit CMOS Mask ROM
Datasheet download datasheet K3N4C1000D-DC Datasheet
Additional preview pages of the K3N4C1000D-DC datasheet.

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K3N4C1000D-D(G)C 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. K3N4C1000D-DC : 42-DIP-600 -. K3N4C1000D-GC : 44-SOP-600 CMOS MASK ROM GENERAL DESCRIPTION The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.
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