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K3N4C1000D-TE Datasheet, Samsung Electronics

K3N4C1000D-TE Datasheet, Samsung Electronics

K3N4C1000D-TE

datasheet Download (Size : 59.85KB)

K3N4C1000D-TE Datasheet

K3N4C1000D-TE rom equivalent, 8m-bit cmos mask rom.

K3N4C1000D-TE

datasheet Download (Size : 59.85KB)

K3N4C1000D-TE Datasheet

Features and benefits


* Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode)
* Fast access time : 100ns(Max.)
* Supply voltage : single +5V
* Current consu.

Description

The K3N4C1000D-TC(E) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.(See mode selec.

Image gallery

K3N4C1000D-TE Page 1 K3N4C1000D-TE Page 2 K3N4C1000D-TE Page 3

TAGS

K3N4C1000D-TE
8M-Bit
CMOS
Mask
ROM
Samsung Electronics

Manufacturer


Samsung Electronics

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