K3N5V1000F-DC
Description
The K3N5V(U)1000F-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152 x 8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection.
Key Features
- Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)
- Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF
- Supply voltage : single +3.0V/single +3.3V
- Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.)
- Fully static operation
- All inputs and outputs TTL compatible
- Three state outputs
- Package -. K3N5V(U)1000F-DC : 42-DIP-600 -. K3N5V(U)1000F-GC : 44-SOP-600
