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K3N5V1000F-DC

Manufacturer: Samsung Semiconductor

K3N5V1000F-DC datasheet by Samsung Semiconductor.

K3N5V1000F-DC datasheet preview

K3N5V1000F-DC Datasheet Details

Part number K3N5V1000F-DC
Datasheet K3N5V1000F-DC_SamsungSemiconductor.pdf
File Size 67.02 KB
Manufacturer Samsung Semiconductor
Description 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
K3N5V1000F-DC page 2 K3N5V1000F-DC page 3

K3N5V1000F-DC Overview

Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The K3N5V(U)1000F-DC is packaged in a 42-DIP and the K3N5V(U)1000F-GC in a 44-SOP.

K3N5V1000F-DC Key Features

  • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)
  • Supply voltage : single +3.0V/single +3.3V
  • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.)
  • Fully static operation
  • All inputs and outputs TTL patible
  • Three state outputs
  • Package -. K3N5V(U)1000F-DC : 42-DIP-600 -. K3N5V(U)1000F-GC : 44-SOP-600
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