K3N5V1000F-DC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM

Product Overview

Samsung Semiconductor

Datasheet Details

Part number	K3N5V1000F-DC
Manufacturer	Samsung Semiconductor
File Size	67.02 KB
Description	16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
Datasheet	K3N5V1000F-DC Datasheet
Additional preview pages of the K3N5V1000F-DC datasheet.

Product details

Description

The K3N5V(U)1000F-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152 x 8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL compatible.

Features

Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode).
Fast access time 3.3V Operation : 100ns(Max. )@CL=50pF, 120ns(Max. )@CL=100pF 3.0V Operation : 120ns(Max. )@CL=100pF.
Supply voltage : single +3.0V/single +3.3V www. DataSheet4U. com.
Current consumption Operating : 40mA(Max. ) Standby : 30µA(Max. ).
Fully static operation.
All inputs and outputs TTL compatible.
Three state outputs.
Package -. K3N5V(U)1000.

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Published: Dec 9, 2008 |