K3N5V1000F-DC
FEATURES
- Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)
- Fast access time 3.3V Operation : 100ns(Max.)@CL=50p F, 120ns(Max.)@CL=100p F 3.0V Operation : 120ns(Max.)@CL=100p F
- Supply voltage : single +3.0V/single +3.3V ..
- Current consumption Operating : 40m A(Max.) Standby : 30µA(Max.)
- Fully static operation
- All inputs and outputs TTL patible
- Three state outputs
- Package -. K3N5V(U)1000F-DC : 42-DIP-600 -. K3N5V(U)1000F-GC : 44-SOP-600
CMOS MASK ROM
GENERAL DESCRIPTION
The K3N5V(U)1000F-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152 x 8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL patible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for...
