• Part: K4D263238I-VC
  • Manufacturer: Samsung Electronics
  • Size: 475.81 KB
Download K4D263238I-VC Datasheet PDF
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K4D263238I-VC Description

FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238I is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576.

K4D263238I-VC Key Features

  • 2.5V ± 5% power supply for device operation
  • 2.5V ± 5% power supply for I/O interface
  • SSTL_2 patible inputs/outputs
  • 4 banks operation
  • MRS cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (seq
  • Full page burst length for sequential burst type only
  • Start address of the full page burst should be even
  • All inputs except data & DM are sampled at the positive going edge of the system clock
  • Differential clock input
  • Write Interrupted by Read function

K4D263238I-VC Applications

  • Samsung Electronics reserves the right to change products or specification without notice