K4M563233E datasheet, 90fbga equivalent, Samsung semiconductor

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K4M563233E Features and benefits

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1.

K4M563233E Application

e DataShe ORDERING INFORMATION Part No. K4M563233E-M(E)E/N/G/C/L/F75 K4M563233E-M(E)E/N/G/C/L/F80 K4M563233E-M(E)E/N/.

K4M563233E Description

The K4M563233E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

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