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K4M56323PG-G - 2M x 32Bit x 4 Banks Mobile SDRAM

Download the K4M56323PG-G datasheet PDF. This datasheet also covers the K4M56323PG-F variant, as both devices belong to the same 2m x 32bit x 4 banks mobile sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4M56323PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Key Features

  • 1.8V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR (Parti.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4M56323PG-F_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K4M563233D 8Mx32 Mobile SDRAM 90FBGA Samsung
K4M56163PE-F1L 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Samsung
K4M56163PE-F90 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Samsung
K4M56163PE-R 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Samsung
K4M56163PE-RG 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K4M56323PG-C 2M x 32Bit x 4 Banks Mobile SDRAM
K4M56323PG-F 2M x 32Bit x 4 Banks Mobile SDRAM
K4M56323PG-FE 2M x 32Bit x 4 Banks Mobile SDRAM
K4M563233E 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233G 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) -. DPD (Deep Power Down) • DQM for masking. • Auto refresh. • • • • 64ms refresh period (4K cycle). Commercial Temperature Operation (-25°C ~ 70°C).