K4S51163PF-Y mobile-sdram equivalent, 8m x 16bit x 4 banks mobile-sdram.
1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2.
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Part No. K4S51163PF-Y(P)F75 K4S51163PF-Y(P)F90 K4S51163PF-Y(P)F1L Max Freq. 133MHz(CL=3),83MHz(CL.
The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .
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