K4S561632E-TL60 - 256Mb E-die SDRAM Specification

Samsung semiconductor

K4S561632E-TL60 Datasheet Preview — Preview of K4S561632E-TL60 PDF

Datasheet Details

Part number	K4S561632E-TL60
Manufacturer	Samsung semiconductor
File Size	198.76 KB
Description	256Mb E-die SDRAM Specification
Datasheet	K4S561632E-TL60_Samsungsemiconductor.pdf

K4S561632E-TL60 Product details

Description

The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms.

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Published: Apr 7, 2005 |