K4S561632E-TL60 Datasheet (Samsung Semiconductor)

Part K4S561632E-TL60
Description 256Mb E-die SDRAM Specification
Manufacturer Samsung Semiconductor
Size 198.76 KB
Samsung Semiconductor

K4S561632E-TL60 Overview

Key Specifications

Operating Voltage: 3.3 V
Max Voltage (typical range): 3.6 V
Min Voltage (typical range): 3 V
Max Frequency: 166 MHz

Description

The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL compatible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs -. CAS latency (2 &
  • Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

Price & Availability

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